Role of Cd interstitial in group-V doped CdTe
Cadmium Telluride is a key material for thin-film photovoltaic technology The current record efficiency of 22.6% is well below the theoretical limit of 33%, suggesting there is plenty of room for improvement Increasing hole concentration in the p-type CdTe absorber layer is key to improving efficiency Group-V (gV) dopants, P, As, and Sb are shallow acceptors, but show low doping efficiencies The causes of such low doping efficiencies remain the subject of intense debate
Authors
- Intuon Chatratin (ORCID: https://orcid.org/0009-0008-1840-2549)
- Anderson Janotti (ORCID: https://orcid.org/0000-0002-0358-2101)
- Igor Evangelista (ORCID: https://orcid.org/0000-0003-2402-9484)
Institutions
- University of Delaware (US)
Publication Details
- Published
- 2024-10-24
- DOI
- https://doi.org/10.2172/2504219
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Energy Research Scientific Computing Center
- Office of Energy Efficiency and Renewable Energy