Two–Dimensional Electron-Hole GaAs System in the Static Fluctuation Approximation

Abstract: The energy spectrum, particle distribution, internal energy, and specific heat capacity of a two-dimensional electron-hole GaAs system were investigated within the framework of the static fluctuation approximation. The study explored the influence of temperature, dielectric thickness, and dielectric constant on these properties. It was found that the interaction potential had a more pronounced effect on the energy spectrum and distribution of holes than on those of electrons. The results also revealed that the interaction potential effect on internal energy and specific heat capacity of the system occurs at temperatures less than the Fermi temperature. Additionally, the study found that at low temperatures, the system exists in a bound state, whereas at high temperatures, it transitions to a scattering state. Keywords: Static fluctuation approximation, Two-dimensional electron-hole GaAs system, Energy spectrum, Particle distribution, Heat capacity. PACS: 65.40. Ba, 71.10. Ca, 71.35. Ee, 73.63.Hs.