An Improved High-Reliability Level Shifter for Gallium Nitride Transistor Half-Bridge Based on Current Mirror Differential Compensation

Gallium Nitride transistors are increasingly becoming the preferred choice for power electronic converters due to their superior switching characteristics. Their gate drivers require level shifters with high noise immunity and low latency to ensure stable operation during high-frequency switching. This paper presents an improved level shifter based on a current mirror cross coupled structure, which translates a voltage domain of 0V-5V to a 35V-40V range. The proposed design enhances the traditional structure by adding an error current preprocessing stage to achieve higher power slew-rate immunity. The circuit is fabricated using a 0.35um HVCMOS process and validated with a 1MHz square wave signal. The result shows that the circuit's slew-rate immunity exceeds 700V/ns, with a rise delay of 1.462ns and a fall delay of 1.406ns.