A Low-temperature Compensated High-precision Bandgap Reference
The paper presents a novel bandgap reference voltage source structure that offers several advantages, including low-temperature coefficient, high supply voltage rejection ratio (PSRR), and low current consumption. The bandgap reference voltage source is designed using a 180 nm CMOS process and implemented in a circuit with a core area of 400 μm × 120 μm (excluding PAD). Simulated results demonstrate that the bandgap reference has an stable output voltage of 0.559 V, a minimum output temperature coefficient of 0.474 ppm/℃ over the temperature range of -40 ℃ to 125 ℃, and an optimal PSRR of - 92.566 dB@100Hz, with a supply voltage of 1.8 V. The bandgap reference's current consumption is only 21.67 μA under typical conditions, and simulation test results indicate that the bandgap reference exhibits low-temperature coefficient and high PSRR, making it suitable for high-precision signal chain applications.
Authors
- Yan Wang (ORCID: https://orcid.org/0000-0001-9217-6983)
- Guohe Zhang
- Ke Chang (ORCID: https://orcid.org/0000-0001-6767-7321)
- Guo Chen (ORCID: https://orcid.org/0000-0003-1524-4334)
- Yang Pu
- Chenchen Shao
- Yuxin Wang (ORCID: https://orcid.org/0009-0000-5095-7247)
Institutions
- China Electronics Technology Group Corporation (CN)
- Xi'an Jiaotong University (CN)
- Tsinghua University (CN)
Publication Details
- Published
- 2024-09-20
- DOI
- https://doi.org/10.1109/iccs62517.2024.10846419
- Citations
- 1
- Primary Topic
- Sensor Technology and Measurement Systems
- Type
- article
- Field-Weighted Citation Impact
- 0.35