Comparative Analysis of GaN HEMT on β-Ga₂O₃ and conventional substrates for RF Applications

This work presents performance investigation of the impact of different substrates on GaN-HEMTs, with an emphasis on important parameters including drain current, transconductance, and cut-off frequency. GaN-HEMT device with gate length of 200 nm and gate width of 100 μm was used to study the device performance using different substrates such as 6H-SiC, Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>, GaN, and β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>. It has been observed that β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>, shows excellent device performance with a maximum drain current of 1.21 A/mm, a peak transconductance of 262.46 mS/mm, and a cut-off frequency of 50.59 GHz. These findings demonstrate that β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> can be used as a suitable substrate for improving GaN-HEMT performance, especially for high frequency high power application.