Accurate Sub-circuit Model of LDMOS Transistor with Drift Region Emphasis

In this work, we proposed a high-precision sub-circuit model on drift region to capture electrical characteristics of a lateral double-diffused MOSFET (LDMOS). The novel sub-circuit model adequately covers temperature effect, self-heating effect, impact ionization effect, and mismatch effect. The key fitting parameters have been shown of less deviation from experimental results. For example, the fitting error of vtlin (threshold voltage at linear region), idlin (on current at linear region) and idsat (on current at saturated region) are less than 6 mV, 1% and 1%, respectively. The developed SPICE model has been applied to the subsequent power circuit design, which shows good performance, further demonstrating the benefits of the model.