Investigating Oxide Material and Thickness Effects on Key Performance Parameters of Dual Source Vertical TFET

This work thoroughly examines Dual source vertical TFET for different gate oxides and their thicknesses. This TFET has garnered attention because of its sharp subthreshold swing (SS) and minimized second-order effects. We specifically analyze the impact of various gate oxides with distinct dielectric constants such as Si<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> (7.5), HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (21), Ta<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> (22) and ZrO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (29) on the DC and RF performance of DSV-TFET. Through comprehensive simulations, key parameters including On-current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">On</inf>), Off-current (IOff), transconductance (gm) and parasitic capacitances (C<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</inf> and C<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</inf>) are assessed. Through our investigation, it was indicated that selecting a specific oxide of particular thickness is crucial for deciding the efficiency of the device, thereby aiding in the progress of low-power semiconductor technology.