A Scalable Model for GaN HEMTs with Trapping and Self-Heating Effects Characterization

A scaling rule suitable for GaN HEMTs with different gate widths is proposed to address the problem of repeated parameter extraction and cumbersome modeling. Firstly, an initial nonlinear model was established as the scaling benchmark. Second, targeting the scaling rules for parasitic capacitance, inductance, and gate/drain finger inductance establish scaling rules to characterize large signal models. Finally, the validation results of GaN HEMTs devices with different gate widths and number of gate fingers show that the scaling model proposed in this paper can accurately simulate the S-parameter and DC I-V.