Optical absorption on exciton states in nanosystems with germanium quantum dots

A theory of optical absorption on surface exciton states with spatially separated electrons and holes has been developed (the hole moves in a germanium quantum dot, and the electron is localized at the spherical interface of the silicon quantum dot matrix). A gigantic increase in polarizabilities (by five orders of magnitude) and absorption cross- sections (by eleven orders of magnitude) due to optical interband transitions between these exciton states has been theoretically predicted. This opens up the possibility of applied nanosystems as new highly absorbing nanomaterials in the infrared range.

Authors

Publication Details

Journal
Chemical Physics Impact
Published
2025-01-23
DOI
https://doi.org/10.1016/j.chphi.2025.100839
Citations
3
Primary Topic
Silicon Nanostructures and Photoluminescence
Type
article
Field-Weighted Citation Impact
1.55
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article

Optical absorption on exciton states in nanosystems with germanium quantum dots

Sergey I. Pokutnyi
3 citations
Chemical Physics Impact
Silicon Nanostructures and Photoluminescence
1.55
article

Optical absorption on exciton states in nanosystems with germanium quantum dots

Sergey I. Pokutnyi
article en
3 citations

Abstract

A theory of optical absorption on surface exciton states with spatially separated electrons and holes has been developed (the hole moves in a germanium quantum dot, and the electron is localized at the spherical interface of the silicon quantum dot matrix). A gigantic increase in polarizabilities (by five orders of magnitude) and absorption cross- sections (by eleven orders of magnitude) due to optical interband transitions between these exciton states has been theoretically predicted. This opens up the possibility of applied nanosystems as new highly absorbing nanomaterials in the infrared range.

Chemical Physics ImpactVol. 10
Affordable and clean energy
Openalex Percentile: Top 20%
Silicon Nanostructures and Photoluminescence
1.55
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