A 13–33 GHz Wideband Low-Noise Amplifier in 150-nm GaAs Based on Simultaneous Noise- and Input-Matched Gain-Core with R-L-C Shunt Feedback Network

This work reports the concept of a shunt negative feedback technique for implementing a millimeter-wave wideband low-noise amplifier. The proposed shunt negative feedback network consists of a resistor–capacitor–inductor configuration. The proposed feedback network can achieve simultaneous noise and input matching (SNIM) over a wide frequency range by adjusting the values of the resistor–capacitor–inductor configuration based on numerical analysis. By adopting the SNIM-based gain core as the first stage of the amplifier, the simulation results of the three-stage low-noise amplifier in a 150-nm GaAs pHEMT process achieve a gain of 15.6–18.6 dB and a noise figure of 1.05–2.8 dB in the frequency range of 13–33 GHz, respectively, while dissipating 99 mW.