Crystallization mechanism of amorphous germanium film irradiated by soft X-ray beams

Abstract To realize high-performance thin-film transistors and solar cells, many low-temperature crystallization methods such as the excimer laser and YAG laser annealing have been investigated. However, those methods deteriorate the substrate because of the temperature increase near the transition point at the semiconductor/substrate interface. It was found that crystallization by soft X-ray irradiation was the most effective method to recover the issue. To elucidate the phenomenon, the in situ current measurement flowing on the surface and the vicinity was carried out. It was considered that the plasmon oscillation and photovoltaic effect occurred during the soft X-ray irradiation.