Low Noise Amplifier and Reflective Switch Design in 130-nm SiGe BiCMOS Technology for X and Ku Band Radar Applications

In this study, the design of low noise amplifer (LNA) and reflective switch, developed using 130-nm SiGe BiCMOS techonology is presented for X-band (8-12 GHz) and Ku-band (12-18 GHz) radar applications. The LNA and reflective switch are critical components due to their effect on the sensitivity performance of radar receiver systems. Therefore, the proposed designs were optimized and improved considering sensitivity performance of the system. The designed LNA provides flat 20 dB gain with a maximum variety of 0.2 dB and its noise figure is below 1.8 dB across the desired frequency band. It operates with 2.5V supply voltage and consumes 40 mW of power. P1-dB and IIP3 values are -16 dBm and -6 dBm respectively. The reflective switch has a maximum insertion loss of 1.5 dB along the desired band and provides isolation of -50 dB at the center frequency of 13 GHz and below -30 dB at the edge of frequency band.