Anti-Reflection Layer Enhanced Absorption of Laser-Induced Phase-Change RF Switch

An anti-reflection layer is employed in this study to facilitate the optical switching of GeTe phase-change material, thereby enhancing the efficiency of laser utilization. The film serves a dual purpose by improving optical absorption and providing dielectric passivation for the device. The present work involves the design of anti-reflective layers using different materials, with a comparative analysis of their impact on reducing power consumption. Simulation results demonstrate that the reflection rate of the laser equipped with an anti-reflective layer can be reduced to less than 27% at a wavelength of 532nm. Furthermore, compared to switches lacking an anti-reflective film, the energy density required for amorphization can be decreased from 160 mJ/cm2 to 95 mJ/cm2, effectively lowering the energy threshold for amorphization switching.