An Experimentally Verified Behavioral GaN HD-GIT Transistor Model

Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs), with their superior on-resistance and switching times, provide a promising alternative to Silicon (Si) and SiC devices. Commercially available normally <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small>GaN transistors can be categorized into two main groups: hybrid transistors, which incorporate a Si <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small>, and e-mode transistors. The latter are the most promising GaN transistors, as they do not have the limitations of Si <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfets</small>. Currently, there are two commercial e-mode transistors: the Schottky Gate (SG) p-GaN and the HD-GIT (Hybrid-Drain-embedded Gate Injection Transistor) transistors. However, they differ from the gate terminal standards that have been defined for years by Silicon IGBTs and <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfets</small> (lower threshold voltage, nonconstant Miller plateau, etc.), complicating their adoption in power electronics converters. This is particularly true for the HD-GIT transistor, which diverges from standard <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> gate operations due to its nonisolated gate terminal. To aid application engineers in understanding these devices and facilitating their adoption in real power applications, simulation models are useful tools. However, there are no simple HD-GIT transistor models that can be easily parameterized by application engineers. Therefore, in this work, an experimentally verified behavioral model of an HD-GIT transistor is presented and described.