Design and Characterization of a Radio-Frequency Switch Based on GeTe Materials
This work presents an innovative radio-frequency (RF) phase-change switch utilizing GeTe material, distinguished by flexibility, efficiency, scalability, miniaturization, and security. Following optimization of parameters, the switch exhibits a shallow insertion loss of -0.66dB in the on-state and an impressive isolation of -14dB in the off-state at 100GHz, representing a substantial performance improvement over conventional RF switches. The switch's compact size enhances its suitability for integration and packaging, rendering it indispensable in contemporary applications.
Authors
- Sixian Qian
- Yunqi Fu (ORCID: https://orcid.org/0000-0001-9633-7473)
- Qiang Chen (ORCID: https://orcid.org/0000-0001-8714-6819)
- Yajing Li (ORCID: https://orcid.org/0000-0002-3769-198X)
- Xinyu Ma (ORCID: https://orcid.org/0000-0002-7406-7289)
Institutions
- National University of Defense Technology (CN)
Publication Details
- Published
- 2024-10-23
- DOI
- https://doi.org/10.1109/isape62431.2024.10841276
- Primary Topic
- Phase-change materials and chalcogenides
- Type
- article
- Field-Weighted Citation Impact
- 0.00