A Single Single-Pole-3-Throw RF Phase Change Switch Based on GeTe Thin Films

As an important component in front-end devices, RF switches can not only control the signal on/off, but also configure different units to regulate the overall RF performance of the device. This work designed and investigated the Single-Pole-3-Throw (SP3T) phase-change switch based on GeTe as phase-change material, simulated the electromagnetism of the SP3T switch and prepared a physical switch for RF performance testing. The actual measured insertion loss of the SP3T switch in the 0–67 GHz band is less than 1.67 dB, and the isolation is more than 17.80 dB. The SP3T phase-change switch is characterized by an insertion loss of less than 1.67 dB and an isolation degree of more than 17.80 dB in the 0–67 GHz frequency band, and it has excellent RF performance and good potential market advantages compared with other RF switches.