A High-Linearity Wideband Power Amplifier Based on Dynamic Bias
In this paper, a high-linearity wideband Ku-band power amplifier chip is designed based on the GaAs 0.15 um process, and the linearity of the amplifier is improved by using diode linearization bias. A stable network design has been added to the input and interstage matching to improve stability. Feedback is introduced to extend the bandwidth of the amplifier. In the 12–17 GHz frequency range, the power gain is greater than 19 dB, the P1dB is greater than 23 dBm, and the peak power added efficiency is 34%.
Authors
- Shuangde Li (ORCID: https://orcid.org/0000-0002-4379-0677)
- Yuxiang Yan
- Huiyuan Li (ORCID: https://orcid.org/0000-0002-6326-9926)
- Shihao Wang (ORCID: https://orcid.org/0000-0003-2645-2075)
- Chenchen Jiang (ORCID: https://orcid.org/0000-0002-6118-9594)
- Yuanjian Liu (ORCID: https://orcid.org/0000-0002-1090-5749)
Institutions
- Nanjing University of Posts and Telecommunications (CN)
Publication Details
- Published
- 2024-10-23
- DOI
- https://doi.org/10.1109/isape62431.2024.10840409
- Citations
- 2
- Primary Topic
- Advanced Power Amplifier Design
- Type
- article
- Field-Weighted Citation Impact
- 0.42