The Performance of GeTe Phase-Change Switches Based on SiC and Si Substrates

The influence of heat dissipation on the performance of GeTe phase change switches cannot be ignored. During the phase transition process, the temperature of GeTe films rises significantly, especially at high frequency or long time operation, and this temperature rise will lead to the degradation of phase-change switch performance or even failure. Therefore, optimizing the heat dissipation structure and materials is crucial to improve the performance of phase-change switches. In this paper, by selecting two different substrate materials, SiC substrate and Si substrate, we analyze the effect of different thermal conductivity substrates on the device performance from the thin film material characterization analysis to the device performance test, and find that SiC, as a high thermal conductivity substrate, has better heat dissipation performance, and the higher the thermal conductivity of the substrate material, the lower the pulse voltage required for the phase-change switch to realize turn-on and turn-off under the same pulse time, and the smaller its power consumption. It has some reference significance for future device fabrication and energy consumption reduction.