An Absorber Using Indium Tin Oxide for High-Power Microwave Application

In this work, an absorber with indium tin oxide (ITO) for high-power microwave (HPM) application is proposed, which combines the advantages of ultra-wideband absorption, high angular stability and high power handling capability. The proposed design is constructed by two different media plates with ITO conductive films, which demonstrates a wide operating frequency range from 2.876GHz to 20.633GHz. The absorbing band with fractional bandwidth of 151.066% for absorptivity greater than 90%. Besides, the proposed absorber has high angular stability. When the absorption greater than 90%,in transverse magnetic (TM) mode, the incidence angle can be achieved 70°, in transverse electrical (TE) mode, the incidence angle can be achieved 50°. To study the power handling capability of the proposed ITO absorber by quantifiable the maximum field enhancement factor (MFEF), which crest value can be achieved 13.0587. The excellent characteristics with ultra-wideband and steady performance under high-power incident make the proposed absorber has various application prospects in HPM protection and stealth.