High-Speed and Low-Energy Phase Change Radio Frequency Switch Using GeTe/Sb Superlattice-Like Film

Due to the comprehensive performance of the phase change radio frequency (RF) switch, it provides a novel and promising idea for the next generation of new microwave switch. This work reports for the first time that the directly heated phase change RF switch based on [(GeTe 5 nm/Sb 5 nm)]<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</inf> superlattice-like phase change film has the advantage of high speed and low energy consumption. The insertion loss of the phase change RF switch based on [(GeTe 5 nm/Sb 5 nm]<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</inf> superlattice-like is less than 0.9 dB and the isolation is greater than 18.6 dB up to 67 GHz. The total energy consumption of the switch can be as low as 964 nJ, and the switching ratio exceeds 4 orders of magnitude. This increases the prospect of RF switches based on phase change materials, which can be used as key components in future refactoring wireless and 6G communication systems.