Design of a PTAT and Bandgap Current Reference with On-chip Digital Calibration

This paper presents the implementation of a bandgap current and proportional to absolute temperature (PTAT) current reference circuits. An on-chip digital calibration circuit is incorporated into the circuits to compensate for the effect of process-induced variations. A start-up circuit that functions without any external signal is also included in the bandgap. The circuits were designed and fabricated in 180 nm CMOS process. The circuits operate with a supply voltage of 1.8V and occupy a total area of 312 × 210 µm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The combined power consumption of the bandgap and PTAT circuits is 210 µW. Measurements in the fabricated test chip show that the bandgap circuit generates a current of 19.2 µA at ambient temperature and exhibits a temperature coefficient of 110 ppm/°C over a temperature range of 0 to 100 °C. The PTAT circuit was observed to generate a current of 3.6 µA at ambient temperature with a slope of 0.014 µA/°C over a temperature range of 0 to 100 °C.

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Published
2024-11-06
DOI
https://doi.org/10.1109/icacc63692.2024.10845383
Citations
1
Primary Topic
Analog and Mixed-Signal Circuit Design
Type
article
Field-Weighted Citation Impact
0.18
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article

Design of a PTAT and Bandgap Current Reference with On-chip Digital Calibration

K Padmakumar, Deepu Roy, A Anupama, Immanuel Raja
1 citations
Analog and Mixed-Signal Circuit Design
0.18
article

Design of a PTAT and Bandgap Current Reference with On-chip Digital Calibration

K Padmakumar, Deepu Roy, A Anupama, Immanuel Raja
article en
1 citations

Abstract

This paper presents the implementation of a bandgap current and proportional to absolute temperature (PTAT) current reference circuits. An on-chip digital calibration circuit is incorporated into the circuits to compensate for the effect of process-induced variations. A start-up circuit that functions without any external signal is also included in the bandgap. The circuits were designed and fabricated in 180 nm CMOS process. The circuits operate with a supply voltage of 1.8V and occupy a total area of 312 × 210 µm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The combined power consumption of the bandgap and PTAT circuits is 210 µW. Measurements in the fabricated test chip show that the bandgap circuit generates a current of 19.2 µA at ambient temperature and exhibits a temperature coefficient of 110 ppm/°C over a temperature range of 0 to 100 °C. The PTAT circuit was observed to generate a current of 3.6 µA at ambient temperature with a slope of 0.014 µA/°C over a temperature range of 0 to 100 °C.

Indian Space Research Organisation (IN), Vikram Sarabhai Space Centre (IN), Indian Institute of Space Science and Technology (IN)
Affordable and clean energy
Openalex Percentile: Top 49%
Analog and Mixed-Signal Circuit Design
0.18
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