A Wideband W-Band Driver Amplifier with Capacitor Neutralization in 28-Nm CMOS

This paper presents a wideband W-band driver amplifier fabricated in a 28-nm CMOS process for automotive radar, imaging, and high-frequency communications. The amplifier achieves a 3dB bandwidth of 70.9-96.9 GHz, with a relative bandwidth of 31%. A peak gain of 4.7 dB, and input/output 1dB compression points of -3.2 dBm and -1.3 dBm, respectively. It employs capacitor neutralization technology to mitigate parasitic effects and improve stability and bandwidth. The design consumes 20.1 mW at 0.9 V and occupies <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{0.05}\ \mathbf{mm}^{2}$</tex>, The amplifier's optimized power output and 50-ohm matching make it suitable for W-band applications.