Quantum dots array: an approach to multipixel devices

Abstract Graphene has been proven to be an excellent material for high-frequency electromagnetic radiation detection. Here, we are reporting the graphene quantum dots (GQDs) devices designed as multi-parallel arrays of the dots (200 nm in diameter) between the source and drain electrodes. These state-of-the-art devices provide a novel concept of tuning the total device area and impedance while maintaining superior performance. The GQDs devices have been fabricated on silicon oxide substrate and analyzed for their transport properties. The multi-parallel array of GQDs on SiO 2 /Si substrates has depicted the possibility of tuning the activation energy depending on the back gate bias and the number of parallelly arranged GQDs while keeping the temperature dependence of resistance higher than 75 MΩ K −1 and 5 GΩ K −1 (for 2-dots and 8-dots devices). The results presented here pave the way for further optimization and realization of chip-scale arrays of GQDs-based multipixel devices, enhancing the applications in imaging and magneto-optical spectroscopy.