Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence

• In this work, for the first time partial recovery of transisitor’s ID-VD characteristics after Resistive Switching is presented. • Also, the transistor’s Back gate terminal role is analyzed in resistive Switching performance. • It is an accomplishment to achieve RS in this type of devices with this oxide. • The possibility to use a single device as a Memristor and transistor is still latent due to the recovery behavior of the samples after RS. Resistive Switching (RS) phenomenon, usually observed in two-terminal memristor devices, refers to the reversible change in resistance of a material under an external electric field. In this work, RS has been observed in N-type Fully Depleted Silicon-On-Insulator (FDSOI) Ω-gate nanowire field-effect transistors (NW-FETs). For the first time, partial recovery of the transistor’s I D -V D characteristics during the RS cycling is experimentally demonstrated, indicating the potential of the device to be used both as a transistor and a memristor. The effect of increasing the back gate voltage on the RS characteristics was also experimentally investigated. It was found that higher back gate voltages enhance the RS parameters, thereby establishing a direct relationship between back bias and device performance.