Step-necking growth of silicon nanowire channels for high performance field effect transistors

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Publication Details

Journal
Nature Communications
Published
2025-01-23
DOI
https://doi.org/10.1038/s41467-025-56376-x
Citations
22
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
16.07

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article

Step-necking growth of silicon nanowire channels for high performance field effect transistors

Ruijin Hu, Linwei Yu, Junzhuan Wang, Lei Liang et al.
22 citations
Nature Communications
Advancements in Semiconductor Devices and Circuit Design
16.07
article

Step-necking growth of silicon nanowire channels for high performance field effect transistors

Ruijin Hu, Linwei Yu, Junzhuan Wang, Lei Liang, Lei Wu, Zhiyan Hu
article en
22 citations

Abstract

No abstract available for this paper.
Nature CommunicationsVol. 16(1)
Collaborative Innovation Center of Advanced Microstructures (CN), Yangzhou University (CN), Nanjing University (CN)
National Natural Science Foundation of China, Government of Jiangsu Province, Natural Science Foundation of Jiangsu Province, Yangzhou University
Affordable and clean energy
Openalex Percentile: Top 1%
Advancements in Semiconductor Devices and Circuit Design
16.07
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