Characterization of the EuZrO<sub>3</sub>/KTaO<sub>3</sub> Interface: Tunable Carrier Density and Long-Range Spin Transport
Among the perovskite oxide family, KTaO3 has recently attracted considerable interest as a versatile platform for the realization of two-dimensional electron gas. In this paper, we report a conducting interface between the EuZrO3 film and the KTaO3 (001) single crystal and demonstrate the wide controllable carrier density and long precession distance. The carrier density and mobility can be controlled by the deposition temperature and film thickness, and the change exceeds about 2 orders of magnitude. Additionally, we observed a negative magnetic resistance which occurs only when Bi < BSO at low temperatures, indicating the dominance of weak localization in this region. The wide-range tunable carrier density and long spin precession distance (∼50.82 nm) in the intrinsic state demonstrate that the interface has the potential for spin transport.
Authors
- Kexin Jin (ORCID: https://orcid.org/0000-0001-5838-0315)
- Xiangyang Wei
- Shuanhu Wang (ORCID: https://orcid.org/0000-0002-5386-1037)
- Hong Yan (ORCID: https://orcid.org/0000-0003-1146-679X)
- Jiaxin Lv
- Huapei Zhu (ORCID: https://orcid.org/0009-0004-4000-9883)
Institutions
- Northwestern Polytechnical University (CN)
Publication Details
- Journal
- ACS Applied Nano Materials
- Published
- 2025-01-22
- DOI
- https://doi.org/10.1021/acsanm.4c06643
- Citations
- 2
- Primary Topic
- Electronic and Structural Properties of Oxides
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- National Natural Science Foundation of China
- Fundamental Research Funds for the Central Universities