Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots

Abstract The rise of electron spin qubit architectures for quantum computing processors has led to a strong interest in designing and integrating ferromagnets to induce stray magnetic fields for electron dipole spin resonance (EDSR). The integration of nanomagnets imposes, however, strict layout and processing constraints, challenging the arrangement of different gating layers and the control of neighboring qubit frequencies. This work reports a successful integration of nano‐sized cobalt control gates into a multi‐gate fully‐depleted silicon‐on‐insulator (FDSOI) nanowire with nanometer‐scale dot‐to‐magnet pitch, simultaneously exploiting electrical and ferromagnetic properties of the gate stack at nanoscale. The electrical characterization of the multi‐gate nanowire exhibits full field effect functionality of all ferromagnetic gates from room temperature to 10 mK, proving quantum dot formation when ferromagnets are operated as barrier gates. The front‐end‐of‐line (FEOL) compatible integration of cobalt is examined by energy dispersive X‐ray spectroscopy and high/low frequency capacitance characterization, confirming the quality of interfaces and control over material diffusion. Insights into the magnetic properties of thin films and patterned control‐gates are provided by vibrating sample magnetometry and electron holography measurements. Micromagnetic simulations anticipate that this structure fulfills the requirements for EDSR driving for magnetic fields higher than 1 T, where a homogeneous magnetization along the hard magnetic axis of the Co gates is expected. The FDSOI architecture showcased in this study provides a scalable alternative to micromagnets deposited in the back‐end‐of‐line (BEOL) and middle‐of‐line (MOL) processes, while bringing technological insights for the FEOL‐compatible integration of Co nanostructures in spin qubit devices.