Design and Implementation of a High-Efficiency 5W Ku-Band Power Amplifier Using a Bare Die GaN HEMT for Satellite Uplink Applications
This paper presents a Ku-band 5W Power Amplifier (PA) using a bare die Gang high electron mobility transistor (HEMT). The circuit was implemented using microwave-integrated circuit (MIC) technology. Wirebonds have been implemented using $\mathbf{2 5}$-micron gold wire on a Rogers 4003C substrate with a thickness of 0.1 mm. Simulation modeling of wirebonds was validated using passive test circuits. Experimental results demonstrate that the PA operates in the 12.5 to 13.5 GHz frequency range, with output power, drain efficiency, and gain of higher than $5 \mathrm{~W}, 40 \%$, and 5 dB, respectively under continuous wave (CW) operation, which is suitable for uplink satellite communication applications.
Authors
- Vahid Nayyeri (ORCID: https://orcid.org/0000-0002-0328-4737)
- Roghieh Karimzadeh Baee (ORCID: https://orcid.org/0000-0001-7481-956X)
- Amin Azimi
- Ehsan Rafiei
Institutions
- ICT Research Institute (IR)
- Iran University of Science and Technology (IR)
Publication Details
- Published
- 2024-10-09
- DOI
- https://doi.org/10.1109/ist64061.2024.10843574
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00