Self-Propagating High-Temperature Synthesis of SiC-Doped Cu2Se Compound: Thermoelectric Properties

Cu2Se thermoelectric compound containing up to 5 wt % SiC was prepared via self-propagating high-temperature synthesis. Doping SiC was shown to improve the thermoelectric properties and get 20% increase in the electrical conductivity and 60% increase in the Seebeck coefficient. The thermoelectric power factor of Cu2Se–5 wt % SiC was found to be 14.4 μW cm–1 K–2 at 900 K, which is 3 times higher than that of Cu2Se.