Silicon Carbide Power Devices: Evolution, Applications, and Future Opportunities

This review discusses the evolution and development of SiC Device technology over the past 30 years and shows opportunities in improving power efficiency by employing SiC devices in power electrical systems applications. The review discusses the challenges encountered and overcome in material development and fabrication technology

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Publication Details

Journal
IEEE Electron Devices Magazine
Published
2024-12-01
DOI
https://doi.org/10.1109/med.2024.3476162
Citations
4
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.83
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article

Silicon Carbide Power Devices: Evolution, Applications, and Future Opportunities

Mikael Östling
4 citations
IEEE Electron Devices Magazine
Silicon Carbide Semiconductor Technologies
0.83
article

Silicon Carbide Power Devices: Evolution, Applications, and Future Opportunities

Mikael Östling
article en
4 citations

Abstract

This review discusses the evolution and development of SiC Device technology over the past 30 years and shows opportunities in improving power efficiency by employing SiC devices in power electrical systems applications. The review discusses the challenges encountered and overcome in material development and fabrication technology

IEEE Electron Devices MagazineVol. 2(4)
KTH Royal Institute of Technology (SE)
Openalex Percentile: Top 25%
Silicon Carbide Semiconductor Technologies
0.83
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Silicon Carbide Power Devices: Evolution, Applications, and Future Opportunities — Mikael Östling · IEEE Electron Devices Magazine (2024) | TGRS Research Map | TGRS