Total Ionizing Dose in 0.13μm and 55nm SiGe : C HBTs

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SPIRE - Sciences Po Institutional REpository
Published
2024-09-16
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
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article

Total Ionizing Dose in 0.13μm and 55nm SiGe : C HBTs

M. Bouhouche, Tadec Maraine, P. Chevalier, J. Boch et al.
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SPIRE - Sciences Po Institutional REpository
Integrated Circuits and Semiconductor Failure Analysis
article

Total Ionizing Dose in 0.13μm and 55nm SiGe : C HBTs

M. Bouhouche, Tadec Maraine, P. Chevalier, J. Boch, S. Haendler, A. Hoffmann, A. Adebabay Belie, Bruno Sagnes, Fabien Pascal, D. Gloria
article en

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SPIRE - Sciences Po Institutional REpository
Institut d'Électronique et des Systèmes (FR)
Openalex Percentile: Top 76%
Integrated Circuits and Semiconductor Failure Analysis
OpenAlex
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Total Ionizing Dose in 0.13μm and 55nm SiGe : C HBTs — M. Bouhouche, Tadec Maraine, et al. · SPIRE - Sciences Po Institutional REpository (2024) | TGRS Research Map | TGRS