Modulating Interface of Ni‐Embedded Hollow Porous Ti ₃ C ₂ T _x MXene Film Toward Efficient EMI Shielding

Since the explosive growth of state-of-the-art electronics and devices raises concerns about electromagnetic pollution, exploring novel and efficient electromagnetic interference (EMI) shielding materials is desirable and crucial. Ti₃C₂T_x MXenes hold significant EMI shielding potential due to their inherent characteristics, including lightweight, metal-like conductivities, unique layered structure, and facile processing. Nonetheless, it remains challenging to fabricate Ti₃C₂T_x MXenes-based EMI shielding materials with efficient shielding capability and low reflection. Herein, an interface modulating strategy is designed to fabricate Ni-embedded hollow porous Ti₃C₂T_x MXene film. Benefiting from this strategy, the impedance matching is enhanced and the magnetic loss is simultaneously introduced. The multiple reflections, Ohmic loss, magnetic loss, and interfacial polarization concurrently contribute to the EMI shielding mechanism of the film. Accordingly, the film delivers an impressive EMI shielding effectiveness (SE_T) of 70.7 dB at a thickness of ≈55 µm, whilst the average reflection effectiveness (SE_R) is only 17.4 dB. The specific EMI shielding effectiveness (SSE/t) is as high as 35126 dB∙cm²∙g^-1. This study demonstrates a novel and effective routine for constructing EMI shielding materials with superior shielding capability and minimal reflection.