Electron Mobility Estimate in GaN MOSFETs
In this research article, estimation of electron mobility is made in GaN n-channel MOSFETs. The technology for GaN MOSFETs is at an infant stage and an early prediction enables technology development. The electron mobility in a Si (100) n-channel MOSFET is also made that vouches for the simple formula developed for the electron mobility estimation, though the long-channel Si MOSFET technology is now of the past.
Authors
- Ravi Kumar Chanana
Publication Details
- Journal
- Applied sciences research periodicals.
- Published
- 2024-12-24
- DOI
- https://doi.org/10.63002/asrp.210.745
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00