A 250 °C Low-Power, Low-Temperature-Drift Offset Chopper-Stabilized Operational Amplifier with an SC Notch Filter for High-Temperature Applications

This paper proposes a three-stage op amp based on the SOI (silicon-on-insulator) process, which achieves a low offset voltage and temperature coefficient across a wide temperature range from −40 °C to 250 °C. It can be used in aerospace, oil and gas exploration, automotive electronics, nuclear industry, and in other fields where the ability of electronic devices to withstand high-temperature environments is strongly required. By utilizing a SC (Switched Capacitor) notch filter, the op amp achieves low input offset in a power-efficient manner. The circuit features a multi-path nested Miller compensation structure, consisting of a low-speed channel and a high-speed channel, which switch according to the input signal frequency. The input-stage operational amplifier is a fully differential, rail-to-rail design, utilizing tail current control to reduce the impact of common-mode voltage on the transconductance of the input stage. The two-stage operational amplifier uses both cascode and Miller compensation, minimizing the influence of the feedforward signal path and improving the amplifier’s response speed. The prototype op amp is fabricated in a 0.15 µm SOI process and draws 0.3 mA from a 5 V supply. The circuit occupies a chip area of 0.76 mm2. The measured open-loop gain exceeds 140 dB, with a 3 dB bandwidth greater than 100 kHz. The amplifier demonstrates stable performance across a wide temperature range from −40 °C to 250 °C, and exhibits an excellent input offset of approximately 20 µV at room temperature and an offset voltage temperature coefficient of 0.7 μV/°C in the full temperature range.

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Publication Details

Journal
Applied Sciences
Published
2025-01-16
DOI
https://doi.org/10.3390/app15020849
Citations
1
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.73

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article

A 250 °C Low-Power, Low-Temperature-Drift Offset Chopper-Stabilized Operational Amplifier with an SC Notch Filter for High-Temperature Applications

Jiangduo Fu, Shushan Qiao, Jiayin Song, Qingsong Cai et al.
1 citations
Applied Sciences
Advancements in Semiconductor Devices and Circuit Design
0.73
article

A 250 °C Low-Power, Low-Temperature-Drift Offset Chopper-Stabilized Operational Amplifier with an SC Notch Filter for High-Temperature Applications

Jiangduo Fu, Shushan Qiao, Jiayin Song, Qingsong Cai, Jiaqi Li, Zhong Yang
article en
1 citations

Abstract

This paper proposes a three-stage op amp based on the SOI (silicon-on-insulator) process, which achieves a low offset voltage and temperature coefficient across a wide temperature range from −40 °C to 250 °C. It can be used in aerospace, oil and gas exploration, automotive electronics, nuclear industry, and in other fields where the ability of electronic devices to withstand high-temperature environments is strongly required. By utilizing a SC (Switched Capacitor) notch filter, the op amp achieves low input offset in a power-efficient manner. The circuit features a multi-path nested Miller compensation structure, consisting of a low-speed channel and a high-speed channel, which switch according to the input signal frequency. The input-stage operational amplifier is a fully differential, rail-to-rail design, utilizing tail current control to reduce the impact of common-mode voltage on the transconductance of the input stage. The two-stage operational amplifier uses both cascode and Miller compensation, minimizing the influence of the feedforward signal path and improving the amplifier’s response speed. The prototype op amp is fabricated in a 0.15 µm SOI process and draws 0.3 mA from a 5 V supply. The circuit occupies a chip area of 0.76 mm2. The measured open-loop gain exceeds 140 dB, with a 3 dB bandwidth greater than 100 kHz. The amplifier demonstrates stable performance across a wide temperature range from −40 °C to 250 °C, and exhibits an excellent input offset of approximately 20 µV at room temperature and an offset voltage temperature coefficient of 0.7 μV/°C in the full temperature range.

Applied SciencesVol. 15(2)
Chinese Academy of Sciences (CN), Institute of Microelectronics (CN), University of Chinese Academy of Sciences (CN)
National Key Research and Development Program of China
Openalex Percentile: Top 32%
Advancements in Semiconductor Devices and Circuit Design
0.73
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