Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with Stepped Electron Blocking Layers

To solve the serious electron leakage problem in the AlGaN-based deep ultraviolet (DUV) light emitting diodes (LEDs), electron blocking layer (EBL) structures are optimized in this paper. Three different EBL, including reference structure and two Al component stepped structures are simulated respectively. The characteristics of P-I curves, internal quantum efficiency (IQE), electron and hole concentration of three devices are compared and analyzed. The results show that the DUV-LED which use the EBL with Al component decline stepped along the growth direction, its electron leakage is reduced and hole injection is increased, and the output performance is effectively optimized. Compared with the traditional structure, the proposed structure has a certain increase in output power and IQE.