Etching-Free Hydrogen Treatment p-GaN HEMT on Sapphire Substrate

To address damage caused by Cl-based plasma etching in p-GaN gate HEMT fabrication, etching-free hydrogen (H) plasma treatment has been developed for HEMT. This work demonstrates hydrogen-treated p-GaN HEMT on a sapphire substrate, fabricated on a 2-inch wafer. The proposed device exhibits a threshold voltage of 1.3 V, a high switching ratio of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.7 \times 10^{9}$</tex>, and a low subthreshold swing of 72.39 mV/dec. Additionally, it shows an on-resistance of 13.02 Ω·mm, a breakdown voltage of 990 V, and a dynamic/static on-resistance ratio of 1.6 at stress of 300 V. This device fabricated on sapphire substrate provides guidance on the widespread application of hydrogen plasma technology for high-voltage power switching.