Simulation Analysis of SiC Powder Synthesis via Gas Phase Transport

Silicon Carbide (SiC) is a promising wide-bandgap (WBG) semiconductor material, offering significant advantages in high-power and high-temperature applications. However, the stringent requirements for the quality of SiC powder during the crystal growth process pose a challenge. In this paper, a detailed investigation into the synthesis of high-quality SiC powder using the gas phase transport method is studied. VR-PVT software is used for theoretical simulations, enabling us to explore the effects of various parameters on the synthesis process. Specifically, we adjust the crucible position and heating power to optimize the temperature field, which is critical for synthesizing SiC powder. We determine the temperature field that is conducive to synthesizing SiC powder and, as a result, high-quality SiC powder is obtained through the gas phase transport method with optimized temperature conditions.