Numerical Study of a New Rugged 1.2 kV SiC Trench MOSFET

This work proposed a new rugged 1.2 kV silicon carbide (SiC) trench MOSFET with integrated merged PiN Schottky diode (MPS). The device structure designed in mind to overcome the process challenge by adapting the regrow technology. Eliminating Mega high energy ion implantation process in order to achieve high implantation region depth, which imperatively needed to shields high electric fields and withstands a high blocking voltage in trench MOS base structure. Based on the calibrated technology computer aided design (TCAD) models, optimization on device critical parameter current spreading layer (CSL) was performed and static characteristics including third quadrant performance are presented.