3–20 GHz Ultra-Wideband Wilkinson Power Divider/Combiner Using GaN on SiC

An ultra-wideband on-chip Wilkinson power divider using GaN on SiC is proposed, a multistage structure is used to extend the bandwidth. Moreover, silicon carbide-based (SiC-based) substrates and thick metals are employed to reduce substrate losses and metal losses respectively. The circuit is designed and simulated. Simulation results show that, in the 3–20 GHz range, the circuit's input/output return loss greater than 12.8/20 dB, the insertion loss is between 0.5 dB and 1.5 dB, and the isolation is greater than 11.5 dB.