A Monolithically Integrated 3-Transistor Voltage Reference Generator Based on p-GaN HEMT Technology

This paper proposes a monolithically integrated voltage reference generator that consists of two depletion-mode and one enhancement-mode GaN HEMTs, capable of operating at various supply voltages. The proposed work is based on p-type GaN gate technology that will decrease the power loss of GaN devices. A stable reference voltage of 2.1 V was experimentally achieved with a high line sensitivity (0.2 %/V). Moreover, the power supply rejection ratio is larger than 42 dB at a frequency variation from 100 kHz to 1 MHz. The proposed circuit exhibits a small power consumption, and the occupied chip area of the GaN voltage reference generator is less than <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.1 \text{mm}^{2}$</tex>. This work demonstrates a stable and effective voltage reference generator, which would be conductive to implement complex GaN integrated circuits.