Experimental Study of β-Ga2O3 Schottky Barrier Diodes with Single Field Plate Termination

Vertical β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Schottky barrier diode (β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> SBD) was fabricated by using a single field plate (SFP) architecture. The diode forward current voltage (I-V) and reverse I-V were carried out by Agilent B1505A high-voltage semiconductor analyzer systems. V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> of the SFP-SBD was 0.97V at a forward current density of 1A/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, and the forward current density of the SBD was 324A/cm2, corresponding specific on-resistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,sp</inf>) was 9.27mΩ.cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> when forward voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</inf>) is 3V at room temperature. Breakdown voltage (BV) was 478V defined at the reverse current density (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</inf>) of 1A/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. Meanwhile, we analyzed the reason for the sample's breakdown, the cross-section image of field plate area showed the difference in BV between simulated and real devices, which is helpful to better design the Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>-based power device.