Investigation of Kink Effect in Quasi-Vertical GaN PiN Diodes on Sapphire
In this paper, the kink effect in the forward I-V characteristics of quasi-vertical GaN PiN diode on sapphire substrate is investigated. The I-V curve shows a kink at a forward bias of around 2.65 V, as also identified by the large hump in the extracted ideality factor near this bias. Temperature-dependent I-V measurement shows that the kink effect diminishes at elevated temperature. Deep level transient spectroscopy (DLTS) measurement reveals hole traps with an energy level <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{E}_{\mathrm{t}}-\mathrm{E}_{\mathrm{v}})$</tex> of 0.83 e V and a concentration of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2\times 10^{15} \text{cm}^{-3}$</tex>, which may be responsible for the kink effect.
Authors
- Renqiang Zhu (ORCID: https://orcid.org/0000-0002-2456-2855)
- Kei May Lau (ORCID: https://orcid.org/0000-0002-7713-1928)
- Huaxing Jiang (ORCID: https://orcid.org/0000-0003-1364-6196)
- Han Lin (ORCID: https://orcid.org/0000-0002-6262-1959)
- Haowen Luo
Institutions
- Hong Kong University of Science and Technology (HK)
- South China University of Technology (CN)
Publication Details
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1109/sslchinaifws64644.2024.10835366
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Applied Basic Research Foundation of Yunnan Province
- Fundamental Research Funds for the Central Universities