TCAD Modeling, Validation, and Performance Prediction of Fe Tail Effects in AlGaN/GaN HEMTs Based on Experimental Data

In this work, we first fitted the three different Fe tailing effects (slopes) with the corresponding two-dimensional electron gas (2DEG) concentration and mobility based on experimental data, obtaining the corresponding 2DEG concentrations and mobilities under different Fe tailing effects. Subsequently, we established a Silvaco TCAD simulation model for AlGaN/GaN HEMTs based on the three Fe tailing effects and validated the model's accuracy using experimental data. Finally, the model was used to predict the impact of an additional Fe tailing effect on the performance of AlGaN/GaN HEMTs. This approach provides a strong reference for the design of epitaxial structures utilizing Fe-doped buffer layers.