Analysis of Trace Impurity of W Element in SiC Particles by Glow Discharge Mass Spectrometry

With the development of the semiconductor, the demand for high-purity silicon carbide is increasing, and the detection of silicon carbide impurities is also of vital importance. In this paper, the trace impurity of W element in silicon carbide particles was studied by direct current glow discharge mass spectrometry (DC-GDMS). By adjusting the argon flow, current and voltage, the instrument was guaranteed to achieve the best analysis state. The isotope of W was determined by the auxiliary cathode indium method and the graphite powder compaction method, and the relative standard deviation (RSD) of the two methods was within 30%. The results of SiC particles determination were compared with that of inductively coupled plasma mass spectrometry (ICP-MS), and the results were within the error range. Glow discharge mass spectrometry is easy to operate, and the results are accurate, reliable, and precise. It can provide a new experimental method for SiC particles test.