Temperature Sensitivity of Vertical Ga₂O₃ Schottky Barrier Diodes

In this work, we evaluate the electrical characteristics and temperature sensing capability of vertical <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_2\mathrm{O}_{3}$</tex> Schottky barrier diodes (SBD). The SBD has good rectification characteristics and low turn-on voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{on})$</tex>. Meanwhile, we calculate the Schottky barrier height and ideality factor for the SBD device to be 1.2 eV and 1.2 by the thermionic electron emission (TE) model, respectively. furthermore, we evaluate the temperature sensitivities of the SBD by measuring the temperature-dependent I-V curves from 298 K to 473 K, and find that there exists a zero-temperature coefficient (ZTC) bias point with the value of 1.2 V. The sensitivities of the diodes are obtained from voltage below the ZTC bias point (sub-threshold region), in which the forward voltages at a specific current decrease linearly with the increasing temperature. Linear relationship between sensitivity and current density is observed for the SBD device.