Analysis of the Effect on the Dislocation Corrosion Rate and Distribution of 4H-SiC Substrate

SiC, as a representative third-generation semiconductor material, possesses excellent physical and chemical properties and finds extensive application in aerospace power supplies, electric vehicles, smart grids, rail transit, industrial motors, and other fields. The development and application of devices based on SiC single crystals as the primary material are significantly hindered by defects in SiC substrates. This paper mainly studies the wet corrosion process of 4H-SiC singlecrystal substrates, which corrode 4H-SiC single-crystal substrates by melting with KOH, and studies the corrosion rate of different types of 4H-SiC single-crystal Si surface dislocations. The corrosion time of the 4H-SiC single-crystal substrate was controlled by monitoring the use frequency of the corrosive liquid, and it was found that the processing state of the 4H-SiC single-crystal substrate surface differed, which also caused a difference in the dislocation density.