Optimization of AlGaN-Based Deep Ultraviolet LEDs with a Graded Superlattice Electron Blocking Layer
To enhance the performance of deep ultraviolet light-emitting diodes (DUV LEDs), this study adopts an AlGaN/AlGaN graded superlattice (SL) electron blocking layer (EBL) to replace the conventional AlGaN EBL. Simulation results indicate that, compared to the traditional EBL, the grade SL EBL is used to effectively reduce electron leakage, improve hole injection efficiency, improve carrier distribution, and improve radiation recombination rate in multi-quantum Wells (MQWs), so that DUV LEDs have higher emission power and higher internal quantum efficiency (IQE).
Authors
- Wanli Ma (ORCID: https://orcid.org/0000-0002-4153-0994)
- Yuhuai Liu (ORCID: https://orcid.org/0000-0003-3426-2861)
- Fang Wang (ORCID: https://orcid.org/0000-0002-9203-3103)
- Xin Wang (ORCID: https://orcid.org/0000-0002-0333-0238)
- Aoxiang Zhang (ORCID: https://orcid.org/0000-0001-5475-7795)
Institutions
- Zhengzhou University (CN)
Publication Details
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1109/sslchinaifws64644.2024.10835362
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Center for International Joint Research on E-Business Information Processing
- National Key Research and Development Program of China
- Sistema Nacional de Investigación, Secretaría Nacional de Ciencia, Tecnología e Innovación