On-Chip Integration of GaN-Based Metal Oxide Semiconductor Field Effect Transistor and Ultraviolet Light-Emitting Diode

This paper presents an effective on-chip integration of a GaN-based metal-oxide-semiconductor field-effect transistor (MOSFET) and an ultraviolet light-emitting diode (UV LED) on a GaN-on-Si LED epitaxial (epi) wafer, designed and simulated using Silvaco TCAD. In the proposed structure, the drain of the MOSFET and the cathode of the UVLED share the same n-AlGaN layer, effectively reducing parasitic effects and improving device reliability and stability. The simulated MOSFET exhibits a maximum output current of 121 mA/mm and a peak transconductance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{G}_{\mathrm{m}})$</tex> of 18.92 mS/mm. The designed UV LED emits at a wavelength of 392 nm with a threshold voltage of 3.1 V. Simulation results indicate that our MOSFET can effectively modulate the light output and output current of the integrated UV LED. This approach offers promising potential for applications in UV light communication and biomedicine.