Research on High Thermal Conductivity Silver Sintering Interconnection Process and Heat Dissipation Performance of High-Power UV-LED Packaging Chips
Ultraviolet light-emitting diodes (UV-LEDs) have important application value in fields such as early sterilization and disinfection, biochemical testing, medical health, and covert communication. The interconnection technology plays a crucial role in the performance and reliability of UV-LED packaging. Traditional soldering methods have inherent limitations in high temperature and high reliability applications. Nanoscale metal silver particle sintered materials have attracted much attention due to their significant advantages in achieving reliable interconnects at low processing temperatures and high operating temperatures, and have become one of the ideal choices for UV-LED chip packaging interconnect materials. Therefore, it is urgent to carry out reliability verification and basic theoretical research on silver sintering interconnects, clarify typical key interface behaviors, influencing factors, and control methods in order to meet the pressing demands of packaging interconnect technology. This paper focuses on the heat dissipation performance and reliability issues of nano-sintered silver material interconnection in high-power UV-LED devices. It proposes using pressureless nano sintered silver paste as the die attach material for UVA-LED chips. Firstly, a crossed experimental scheme is designed for sintering process factors such as sintering temperature and sintering time. Analyzed the changes in shear strength of light-emitting diode devices under different solidification temperatures and times, obtained the optimal sintering process, and tested the maximum shear strength; In addition, this study also explored the chip operating temperature of nano silver paste as a die attach material for LEDs through finite element analysis, and compared it with traditional solder paste materials. The results showed that nano-sintered silver paste as a die attach material facilitates an effective heat dissipation pathway for high-power LEDs, and the chip operating temperature can be reduced by about 27%, reducing the chip junction temperature and enhancing device reliability.
Authors
- Miao Cai (ORCID: https://orcid.org/0000-0001-5836-0998)
- Hao Chen (ORCID: https://orcid.org/0000-0002-0252-7530)
- Daoguo Yang (ORCID: https://orcid.org/0000-0003-2735-2076)
- Yuxuan Guo (ORCID: https://orcid.org/0000-0003-0869-3350)
Institutions
- Guilin University of Electronic Technology (CN)
Publication Details
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1109/sslchinaifws64644.2024.10835380
- Primary Topic
- Nanomaterials and Printing Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China