A Novel 4H-SiC FinFET with Alternating Deep P+ Wells for High Reliability

SiC FinFET can significantly improve the channel effective mobility and reduce the specific on-resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{R}_{\text{on},\text{sp}})$</tex>, because of its ultra-narrow-body structure [1]–[3]. Power electronic circuits often require devices to operate in blocking state, so ensuring the reliability of the device under blocking voltage is crucial. In this study, we propose a novel vertical SiC-FinFET structure with alternating deep P+ wells. Simulation result shows that under the rated blocking voltage, the gate oxide of the new structure has a low electric field (<3MV/cm), which improves the reliability of the oxide layer. Moreover, the Ron,sp of the new structure is also lower than that of the conventional MOSFETs with the same specification, demonstrating the potential of this structure.